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SPEC NO: DSAN0651 REV NO: V.1A DATE: JUN/24/2013
PAGE: 2 OF 7
APPROVED: WYNEC CHECKED: Joe Lee DRAWN: Q.M.Chen ERP: 1301000239
Selection Guide
Absolute Maximum Ratings at TA=25°C
Electrical / Optical Characteristics at TA=25°C
Notes:
1. 1/10 Duty Cycle, 0.1ms Pulse Width.
2. 2mm below package base.
Part No.
Dice
Lens Type
Iv (ucd) [1]
@ 10mA
Description
Min.
Typ.
High Efficiency Red (GaAsP/GaP)
White Diffused
31000
57000
Common Anode, Rt.
Hand Decimal
*9000
*17000
SA23-12EWA
Symbol
Parameter Device
Typ.
Max.
Units
Test Conditions
λpeak
Peak Wavelength High Efficiency Red
627
nm
IF=20mA
λD [1]
Dominant Wavelength High Efficiency Red
617
nm
IF=20mA
Δλ1/2
Spectral Line Half-width High Efficiency Red
45
nm
IF=20mA
C
Capacitance High Efficiency Red
15
pF
VF=0V;f=1MHz
VF
[2]
Forward Voltage
(DP)
High Efficiency Red
8.0
(4.0)
10.0
(5.0)
V
IF=20mA
IR
Reverse Current
(Per Chip)
High Efficiency Red
10
(10)
uA
VR=5V
(V
R=5V)
Parameter High Efficiency Red
Units
Power dissipation
(DP)
300
(150)
mW
DC Forward Current
(DP)
30
(30)
mA
Peak Forward Current [1]
(DP)
160
(160)
mA
Reverse Voltage
(Per Chip)
5
(5)
V
Operating/Storage Temperature -40°C To +85°C
Lead Solder Temperature [2] 260°C For 3-5 Seconds
Notes:
1. Luminous intensity/ luminous Flux: +/-15%.
*Luminous intensity value is traceable to the CIE127-2007 compliant national standards.
Notes:
1.Wavelength: +/-1nm.
2. Forward Voltage: +/-0.1V.
3. Wavelength value is traceable to the CIE127-2007 compliant national standards.
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